(China (Mainland))
Product Summary
The AO3400 is an N-Channel Enhancement Mode Field Effect Transistor. It uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The AO3400 is suitable for use as a load switch or in PWM applications.
Parametrics
AO3400 absolute maximum ratings: (1)Power Dissipation: 1.4W or 0.9W; (2)Junction and Storage Temperature Range: -55 to 150℃; (3)Gate-Source Voltage: ±12V; (4)Drain-Source Voltage: 30V; (5)Pulsed Drain Current: 25A; (6)Continuous Drain Current: 5.7A or 4.7A.
Features
AO3400 features: (1)VDS (V) = 30V; (2)ID = 5.7A (VGS = 10V); (3)RDS(ON) < 26.5mΩ (VGS = 10V); (4)RDS(ON) < 32mΩ (VGS = 4.5V); (5)RDS(ON) < 48mΩ (VGS = 2.5V).
Diagrams
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Pricing (USD) |
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 AO3400 |
Other |
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Data Sheet |
Negotiable |
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AO3400A |
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MOSFET N-CH 30V 5.7A SOT23 |
Data Sheet |
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