Product Summary

The BFP182E7764 is a NPN Silicon RF Transistor for low-power amplifiers in mobile.

Parametrics

BFP182E7764 absolute maximum ratings: (1)Collector-emitter voltage: 8 V; (2)Collector-emitter voltage: 10 V; (3)Collector-base voltage: 10V; (4)Emitter-base voltage: 2 V; (5)Collector current: 4mA; (6)Base current: 0.5 mA; (7)Total power dissipation TS ≤ 126 ℃: 30 mW; (8)Junction temperature: 150 ℃; (9)Ambient temperature: - 65 to + 150℃; (10)Storage temperature: - 65 to + 150 ℃.

Features

BFP182E7764 features: (1)For low-power amplifiers in mobile; (2)communication systems (pager) at collector currents from 0.2 to 2.5mA fT = 7GHz; (3)F = 2.1dB at 900MHz.

Diagrams

BFP182E7764 block diagram

BFP182 E7764
BFP182 E7764

Other


Data Sheet

Negotiable 
BFP182R
BFP182R

Other


Data Sheet

Negotiable 
BFP182T
BFP182T

Other


Data Sheet

Negotiable 
BFP183R
BFP183R

Other


Data Sheet

Negotiable 
BFP183T
BFP183T

Other


Data Sheet

Negotiable 
BFP183TRW
BFP183TRW

Other


Data Sheet

Negotiable