(China (Mainland))
Product Summary
The BFP182E7764 is a NPN Silicon RF Transistor for low-power amplifiers in mobile.
Parametrics
BFP182E7764 absolute maximum ratings: (1)Collector-emitter voltage: 8 V; (2)Collector-emitter voltage: 10 V; (3)Collector-base voltage: 10V; (4)Emitter-base voltage: 2 V; (5)Collector current: 4mA; (6)Base current: 0.5 mA; (7)Total power dissipation TS ≤ 126 ℃: 30 mW; (8)Junction temperature: 150 ℃; (9)Ambient temperature: - 65 to + 150℃; (10)Storage temperature: - 65 to + 150 ℃.
Features
BFP182E7764 features: (1)For low-power amplifiers in mobile; (2)communication systems (pager) at collector currents from 0.2 to 2.5mA fT = 7GHz; (3)F = 2.1dB at 900MHz.
Diagrams
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BFP181R |
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BFP181TRW |
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BFP181TW |
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Negotiable |
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