Product Summary
The BYG22D-E3/TR is a Super Fast Silicon Mesa SMD Rectifier. The applications of the BYG22D-E3/TR include Surface mounting, Super fast rectifier, Freewheeling diodes in SMPS and converters, Snubber diodes.
Parametrics
BYG22D-E3/TR absolute maximum ratings: (1)Reverse voltage =Repetitive peak reverse voltage: 200 V; (2)Peak forward surge current: 35A; (3)Average forward current IFAV: 2A; (4)Junction and storage temperature range Tj=Tstg: –55 to +150℃; (5)Pulse energy in avalanche mode, non repetitive (inductive load switch off): 20mJ.
Features
BYG22D-E3/TR features: (1)Controlled avalanche characteristic; (2)Glass passivated junction; (3)Low reverse current; (4)Low forward voltage; (5)Soft recovery characteristic; (6)Very fast reverse recovery time; (7)Good switching characteristics; (8)Wave and reflow solderable.
Diagrams
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![]() BYG22D-E3/TR |
![]() Vishay Semiconductors |
![]() Rectifiers 2.0 Amp 200 Volt 14 |
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![]() BYG22D-E3/TR3 |
![]() Vishay Semiconductors |
![]() Rectifiers 2.0 Amp 200 Volt |
![]() Data Sheet |
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