(China (Mainland))
Product Summary
The MBR1100RLG is an axial lead rectifier. The MBR1100RLG employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. The MBR1100RLG is ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes.
Parametrics
MBR1100RLG absolute maximum ratings: (1) Peak Repetitive Reverse Voltage : 100V; (2) Non.Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) : 50A; (3) Operating and Storage Junction Temperature Range (Note 1) : -65 to +175℃; (4) Voltage Rate of Change (Rated VR) : 10 V/ns.
Features
MBR1100RLG features: (1)Low Reverse Current; (2)Low Stored Charge, Majority Carrier Conduction; (3)Low Power Loss/High Efficiency; (4)Highly Stable Oxide Passivated Junction; (5)Guard-Ring for Stress Protection; (6)Low Forward Voltage; (7)175℃ Operating Junction Temperature; (8）High Surge Capacity; (9)These are Pb-Free Devices.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 MBR1100RLG |
ON Semiconductor |
Schottky (Diodes & Rectifiers) 1A 100V |
Data Sheet |
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MBR10 |
Other |
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Data Sheet |
Negotiable |
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MBR10.. Series |
Other |
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Data Sheet |
Negotiable |
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MBR10..PbF Series |
Other |
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Data Sheet |
Negotiable |
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MBR10/15/25/35/50A |
Other |
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Data Sheet |
Negotiable |
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MBR10/15/25/35/50AW |
Other |
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Data Sheet |
Negotiable |
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MBR100CT-1 |
Other |
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Data Sheet |
Negotiable |
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