Product Summary
The MBR120LSFT1G is a Surface Mount Schottky Power Rectifier. The MBR120LSFT1G uses the Schottky Barrier principle with a large area metal-to-silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package also provides an easy to work with alternative to leadless 34 package style. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications of the MBR120LSFT1G are AC.DC and DC.DC converters, reverse battery protection, and “Oring” of multiple supply voltages and any other application where performance and size are critical.
Parametrics
MBR120LSFT1G absolute maximum ratings: (1)Peak Repetitive Reverse Voltage: 20V; (2)Working Peak Reverse Voltage: 20V; (3)DC Blocking Voltage: 20V; (4)Average Rectified Forward Current (At Rated VR, TL = 115℃) IO: 1.0A; (5)Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TL = 110℃) IFRM: 2.0A; (6)Non.Repetitive Peak Surge Current (Non-Repetitive peak surge current, halfwave, single phase, 60 Hz) IFSM: 50A; (7)Storage Temperature Tstg -55 to 150℃; (8)Operating Junction Temperature TJ: -55 to 125℃; (9)Voltage Rate of Change (Rated VR, TJ = 25℃) dv/dt: 10,000 V/μs.
Features
MBR120LSFT1G features: (1)Guardring for Stress Protection; (2)Low Forward Voltage; (3)125℃ Operating Junction Temperature; (4)Epoxy Meets UL 94 V-0 @ 0.125 in; (5)Package Designed for Optimal Automated Board Assembly; (6)ESD Ratings: Machine Model, C Human Body Model, 3B; (7)Pb-Free Packages are Available.
Diagrams
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![]() MBR120LSFT1G |
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![]() Schottky (Diodes & Rectifiers) 1A 20V |
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