(China (Mainland))
Product Summary
The MBR3100 is an axial lead rectifier. The MBR3100 employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. The MBR3100 is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes.
Parametrics
MBR3100 absolute maximum ratings: (1) Peak Repetitive Reverse Voltage : 100V; (2) Average Rectified Forward Current TA = 100℃ (RθJA = 28℃/W, Refer to P.C. Board Mounting, Note 3) : 3.0A; (3) Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) : 150A; (4) Operating and Storage Junction Temperature Range (Note 1) (Reverse Voltage Applied) : -65 to +175℃; (5) Voltage Rate of Change (Rated VR) : 10V/ns.
Features
MBR3100 features: (1)Low Reverse Current; (2)Low Stored Charge, Majority Carrier Conduction; (3)Low Power Loss/High Efficiency; (4)Highly Stable Oxide Passivated Junction; (5)Guard-ring for Stress Protection; (6)Low Forward Voltage; (7)175℃ Operating Junction Temperature; (8)High Surge Capacity; (9)Pb-Free Packages are Available.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 MBR3100 |
ON Semiconductor |
Schottky (Diodes & Rectifiers) 3A 100V |
Data Sheet |
Negotiable |
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MBR3100G |
ON Semiconductor |
Schottky (Diodes & Rectifiers) 3A 100V |
Data Sheet |
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MBR3100RL |
ON Semiconductor |
Schottky (Diodes & Rectifiers) 3A 100V |
Data Sheet |
Negotiable |
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MBR3100RLG |
ON Semiconductor |
Schottky (Diodes & Rectifiers) 3A 100V |
Data Sheet |
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