(China (Mainland))
Product Summary
The MBRA340T3G is a general purpose rectifier. The MBRA340T3G employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact.The MBRA340T3G ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to the system.
Parametrics
MBRA340T3G absolute maximum ratings: (1) Peak Repetitive Reverse Voltage : 40V; (2) Average Rectified Forward Current (At Rated VR, TL = 100℃) : 3.0A; (3) Operating Junction Temperature : -55 to 125℃; (4) Voltage Rate of Change (Rated VR, TJ = 25℃) : 10000 V/μs.
Features
MBRA340T3G features: (1)Small Compact Surface Mountable Package with J-Bent Leads; (2)Rectangular Package for Automated Handling; (3)Highly Stable Oxide Passivated Junction; (4)Very Low Forward Voltage Drop; (5)Guardring for Stress Protection; (6)Pb-Free Package is Available.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 MBRA340T3G |
ON Semiconductor |
Schottky (Diodes & Rectifiers) 3A 40V |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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MBRA100 |
Other |
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Data Sheet |
Negotiable |
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MBRA1100T3 |
Other |
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Data Sheet |
Negotiable |
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MBRA120 |
Other |
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Data Sheet |
Negotiable |
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MBRA120ET3 |
ON Semiconductor |
Schottky (Diodes & Rectifiers) 1A 20V |
Data Sheet |
Negotiable |
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MBRA120ET3G |
ON Semiconductor |
Schottky (Diodes & Rectifiers) 1A 20V |
Data Sheet |
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 |
MBRA120LT3 |
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DIODE SCHOTTKY 20V 1A SMA |
Data Sheet |
Negotiable |
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