(China (Mainland))
Product Summary
The RSR025P03 is a 4V Drive Pch MOS FET.
Parametrics
RSR025P03 absolute maximum ratings: (1)Drain-source voltage: -30V; (2)Gate-source voltage: ±20V; (3)Drain current Continuous: ±2.5A; (4)Pulsed: ±10A; (5)Total power dissipation: 1W; (6)Channel temperature: 150℃; (7)Range of storage temperature: -55 to 150℃.
Features
RSR025P03 features: (1)Low On-resistance; (2)Space saving.small surface mount package (TSMT3); (3)4V drive.
Diagrams
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Pricing (USD) |
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 RSR025P03TL |
ROHM Semiconductor |
MOSFET P-CH 30V 2.5A TSMT3 |
Data Sheet |
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RSR015P03 |
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Data Sheet |
Negotiable |
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RSR015P03TL |
ROHM Semiconductor |
MOSFET P-CH 30V 1.5A TSMT3 |
Data Sheet |
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RSR025N03 |
Other |
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Data Sheet |
Negotiable |
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RSR025N03TL |
ROHM Semiconductor |
MOSFET N-CH 30V 2.5A TSMT3 |
Data Sheet |
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