Product Summary

Product type: IGBT module

RoHS: no

Products: IGBT Silicon Modules

Configuration: Hex

Collector Emitter maximum voltage of VCEO: 1200 V

Collector Emitter Saturation Voltage: 2.1 V

Continuous collector current at 25 C: 160 A

The gate and emitter leakage current: 400 nA

Power dissipation: 650 W

The maximum operating temperature: + 125 C

Packaging / box: EconoPACK 3A

The gate / emitter maximum voltage: + / - 20 V

Minimum working temperature: - 40 C

Installation style: Screw

Factory packaging quantity: 500

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BSM100GD120DLC
BSM100GD120DLC
Infineon Technologies
IGBT Modules 1200V 100A 3-PHASE
Data Sheet
0-6: $133.27
6-10: $119.94
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BSM100GAL120DLCK
BSM100GAL120DLCK
Infineon Technologies
IGBT Modules 1200V 100A CHOPPER
Data Sheet
0-1: $44.53
1-10: $40.07
BSM100GAL120DN2
BSM100GAL120DN2
Infineon Technologies
IGBT Modules 1200V 100A CHOPPER
Data Sheet
Negotiable 
BSM100GAR120DN2
BSM100GAR120DN2
Infineon Technologies
IGBT Transistors 1200V 100A DUAL
Data Sheet
Negotiable 
BSM100GB120DLC
BSM100GB120DLC
Infineon Technologies
IGBT Modules 1200V 100A DUAL
Data Sheet
0-6: $78.93
6-10: $71.03
BSM100GB120DLCK
BSM100GB120DLCK
Infineon Technologies
IGBT Modules 1200V 100A DUAL
Data Sheet
0-1: $49.93
1-5: $47.43
5-10: $44.93
10-50: $43.44
BSM100GB120DN2
BSM100GB120DN2
Infineon Technologies
IGBT Modules 1200V 100A DUAL
Data Sheet
0-1: $82.74
1-10: $74.47