Product Summary
Products: IGBT Silicon Modules
Configuration: Hex
Collector Emitter maximum voltage of VCEO: 1200 V
Collector Emitter Saturation Voltage: 2.5 V
Continuous collector current at 25 C: 25 A
The gate and emitter leakage current: 150 nA
Power dissipation: 145 W
The maximum operating temperature: + 150 C
Package / Case: EconoPACK 2
Package: Reel
The gate / emitter maximum voltage: 20 V
Minimum working temperature: - 40 C
Installation style: Screw
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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BSM15GD120DN2E3224 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 25A |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
BSM100GAL120DLCK |
Infineon Technologies |
IGBT Modules 1200V 100A CHOPPER |
Data Sheet |
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BSM100GAL120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A CHOPPER |
Data Sheet |
Negotiable |
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BSM100GAR120DN2 |
Infineon Technologies |
IGBT Transistors 1200V 100A DUAL |
Data Sheet |
Negotiable |
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BSM100GB120DLC |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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BSM100GB120DLCK |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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BSM100GB120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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