Product Summary

The BAS28E6327 is a High-speed double diode. The BAS28E6327 consists of two high-speed switching diodes, fabricated in planar technology, and encapsulated in the small plastic SMD SOT143 package. The BAS28E6327 is not connected. The applications of the BAS28E6327 include High-speed switching in e.g. surface mounted circuits.

Parametrics

BAS28E6327 absolute maximum ratings: (1)VRRM repetitive peak reverse voltage: 85 V; (2)VR continuous reverse voltage: 75 V; (3)IF continuous forward current: 215mA; (4)IFRM repetitive peak forward current: 500mA; (5)IFSM non-repetitive peak forward current t = 1μs: 4A; (6)t = 1ms: 1A; (7)t = 1s: 0.5A; (8)Ptot total power dissipation Tamb = 25℃: 250mW; (9)Tstg storage temperature: -65 to +150℃; (10)Tj junction temperature: 150℃.

Features

BAS28E6327 features: (1)Small plastic SMD package; (2)High switching speed: max. 4 ns; (3)Continuous reverse voltage: max. 75 V; (4)Repetitive peak reverse voltage: max.85 V; (5)Repetitive peak forward current: max. 500mA.

Diagrams

BAS28E6327 block diagram

BAS20
BAS20
Taiwan Semiconductor
Diodes (General Purpose, Power, Switching) Switching diode 250 mW
Data Sheet
0-3000: $0.01
3000-6000: $0.01
BAS20 /T3
BAS20 /T3
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Data Sheet
Negotiable 
BAS20,215
BAS20,215
NXP Semiconductors
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Data Sheet
0-1: $0.03
1-25: $0.01
25-100: $0.01
100-250: $0.01
BAS20,235
BAS20,235
NXP Semiconductors
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Data Sheet
0-1: $0.03
1-25: $0.01
25-100: $0.01
100-250: $0.01
BAS20_Q
BAS20_Q
Fairchild Semiconductor
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Data Sheet
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BAS20DW
BAS20DW
Other

Data Sheet
Negotiable