Product Summary

The BC857CWE6327 is a PNP Silicon AF Transistor.

Parametrics

BC857CWE6327 absolute maximum ratings: (1)Collector-emitter voltage VCEO: 45V; (2)Collector-base voltage VCBO: 50V; (3)Collector-emitter voltage VCES: 50V; (4)Emitter-base voltage VEBO: 5V; (5)DC collector current IC: 100mA; (6)Peak collector current ICM: 200mA; (7)Peak base current IBM: 200mA; (8)Peak emitter current IEM: 200mA; (9)Total power dissipation, TS = 124℃ Ptot: 250mW; (10)Junction temperature Tj: 150℃; (11)Storage temperature Tstg -:65 to 150℃.

Features

BC857CWE6327 features: (1)For AF input stages and driver applications; (2)High current gain; (3)Low collector-emitter saturation voltage; (4)Low noise between 30 Hz and 15 kHz; (5)Complementary types: BC846W, BC847W, BC848W, BC849W, BC850W (NPN).

Diagrams

BC857CWE6327 graph

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