(China (Mainland))
Product Summary
The BCR185WE6327 is a PNP Silicon Digital Transistor.
Parametrics
BCR185WE6327 absolute maximum ratings: (1)Collector-emitter voltage VCEO: 50V; (2)Collector-base voltage VCBO: 50V; (3)Emitter-base voltage VEBO: 6V; (4)Input on voltage Vi(on): 20V; (5)Collector current IC: 100mA; (6)Total power dissipation:250mW ; (7)Junction temperature Tj: 150℃; (8)Storage temperature Tstg: -65 to 150℃.
Features
BCR185WE6327 features: (1)Switching circuit, inverter, interface circuit, driver circuit; (2)Built in bias resistor (R1 = 10kΩ, R2 = 47kΩ); (3)For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package.
Diagrams
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RES 10K OHM 1/4W 1% BACK-C CHIP |
Data Sheet |
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BCR10001FMAHWT |
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RES 10K OHM 1/4W 1% BACK-C CHIP |
Data Sheet |
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BCR1000BFMAHWS |
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RES 10 OHM 1/4W 1% BACK-C CHIP |
Data Sheet |
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BCR1000BFMAHWT |
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RES 10 OHM 1/4W 1% BACK-C CHIP |
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BCR101F |
Other |
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Data Sheet |
Negotiable |
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BCR101L3 |
Other |
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Data Sheet |
Negotiable |
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